Design Documents
Downloads Design Documents
- Complete overview of design documents
- Design Documents for 0.35µm, 0.8µm and
0.6µm technologies
- ESD: 0.35µm Low Voltage Design Rules ENG-236
- ESD: 0.6/0.8µm Low Voltage Design Rules ENG-41
- Standard Family Cells ENG-42
- Assembly Related Design Rules
ASSY-15
- Standard Marking Limitations ASSY-124
- Package List ASSY-168
+ Addendum: Package Details (updated with ASSY-168)
General Information
The geometrical and electrical characteristics of
austriamicrosystems'
processes are described in the following documents:
| Design Rules |
Design rules specify all rules necessary to create valid geometrical layouts and include:
- Definitions
- General Requirements
- Process Layer Overview
- Structure Rules (override Process Layer Rules)
- Element Rules (override Structure Rules and Process Layer Rules)
- Periphery Rules
- Guidelines
- Recommended Layout Structures
BiCMOS and 50V-CMOS Design Rules are supplements to corresponding CMOS documents. |
| Process Parameters |
Specify all parameters necessary for accurate circuit design and include:
- General
- Wafer Cross-Section
- Operating Conditions
- Current Densities
- Process Control Parameters
- Introduction
- Structural and Geometrical Parameters
- MOS Electrical Parameters
- Bipolar Electrical Parameters
- Sheet Resistances
- Contact Resistances
- Capacitances
- Diodes
- Metal3 Module Parameters
- Poly1-Poly2 Capacitor Module Parameters
- High Resistive Poly Module Parameters
- Notes Measurement Conditions
- Matching Parameter
- Introduction
- MOS Transistor Matching Parameter
- Bipolar Transistor Matching Parameter
- Resistor Transistor Matching Parameter
- Notes Measurement Conditions
- Simulation Models
- Introduction
- Summary of Simulation Models
- Characteristic Curves
- Introduction
- MOS Transistor Characteristics
- Bipolar Transistor Characteristics
- Nonlinear Resistor Characteristics
- Zener Diode Characteristics
|
| RF Spice Models |
RF simulation models for active and passive devices:
- Introduction
- General for all devices
- Short description including validity range
- Subcircuit model
- Main Parameters
- Characteristic Curves
- Summary of RF SPICE models
- Simulator Models and Design Kit Integration
- Note on S-Parameter Measurements
|
| Noise Parameters |
Low frequency noise parameters and models including:
- Introduction
- Revision
- Process Family
- Related Documents
- Noise measurements and Parameter Extraction
- Measurement Setup
- Flicker Noise Modeling
- Noise Parameters
- SPICE parameters
- BSIM parameters
- Simulator models
- Characteristic Noise Curves
|
| Matching Parameters |
Mismatch parameters and models for active and passive devices:
- General
- Matching Parameter
- Introduction
- MOS Transistor Matching Parameter
- Bipolar Transistor Matching Parameter
- Resistor Matching Parameter
- Capacitor Matching Parameter
- Notes/Measurement Conditions
- Characteristic Curves
|
