austriamicrosystems 0.8µm Design Documents
| PROCESS | PROCESS PARAMETERS | DESIGN RULES |
|---|---|---|
|
BiCMOS BYB: 5V, BiCMOS, p-sub, 2-metal, 2-poly ²) BYE: 5V, BiCMOS, p-sub, 2-metal, 2-poly BYQ: 5V, BiCMOS, p-sub, 2-metal, 2-poly, hr-poly |
0.8 µm BiCMOS Process Parameters Document: ENG-124 Revision: 3.0 07/2002 |
0.8 µm BiCMOS Design Rules Document: 9931016 Revision: 2.0 04/2002 |
|
CMOS CXB: 5V, p-sub, 2-metal, 1-poly CXE: 5V, p-sub, 2-metal, 2-poly CXQ: 5V, p-sub, 2-metal, 2-poly, hr-poly |
0.8 µm CXQ CMOS Process Parameters Document: 9933013 Revision: C 08/1999 |
0.8 µm CXQ CMOS Design Rules Document: 9931029 Revision: C 06/1999 |
|
CMOS HV CXT: 50V, p-sub, 2-metal, 1-poly CXY: 50V, p-sub, 2-metal, 2-poly CXZ: 50V, p-sub, 2-metal, 2-poly, hr-poly |
0.8 µm HV CMOS Process Parameters
* Document: 9933014 Revision: 2.0 04/2001 |
0.8 µm CXQ CMOS Design Rules Document: 9931029 Revision: C 06/1999 and 0.8 µm HV CMOS Design Rules¹) Document: 9931030 Revision: 2.0 04/2001 |
¹) This document is a supplement to the 0.8 µm CXQ CMOS Design Rules
²) BYB = BYE without poly-poly capacitors