| Key Features |
- Memory Compiler for ROM in following CMOS Technologies:
- 0.8 µm BYx - compatible with CMOS parts of the process
- 0.8 µm CXx - compatible with 5.0V CMOS parts of CXZ
- diffusion programmable ROMs
- 65,376 bit maximum memory size
- 1 .. 32 bits per word
- 128 .. 4096 words per ROM
- data bus with tri-state condition
- memory organisation in 1 or 2 memory banks
- several length/height ratios available (depending on total size)
|
| Deliverables |
- Frontend services (available via Internet)
- CADENCE
- cell library with symbol, functional, abstract and msps view
- TLF 3.0 timing data file
- black box description in ASCII format
- Verilog model with best/typical/worst timing data
- Backend Services (on order)
- CADENCE
- cell library with additional layout view with full layout data
- flat spice netlist for LVS purpose
- GDSII data
- full layout data in GDSII format
- flat spice netlist for LVS purpose
|
| Area |
| Area [mm2] |
| Process | 1k bit | 2k bit | 4k bit | 8k bit | 16k bit | 64k bit |
| BY_ | 0.23 | 0.27 | 0.33 | 0.46 | 0.81 | 2.58 |
| CX_ | 0.18 | 0.20 | 0.24 | 0.33 | 0.54 | 1.59 |
NOTE:
The area of the memories are influenced by the word/databit configuration of the
specified total size and the height/width ratio of the layout. For some configurations
different height/width ratios are available.
|
| Timing for 5.0V supply |
| Access Time
[ns] |
| Process | 1k bit | 2k bit | 4k bit | 8k bit | 16k bit | 64k bit |
| BY_ | 6.3 | 6.8 | 7.4 | 8.4 | 10.0 | 25.3 |
| CX_ | 6.4 | 7.0 | 8.1 | 9.7 | 12.7 | 19.5 |
| Timing conditions: |
- typical process parameters
- VDD = 5.0V
- Tj = 27°C
|
|
|
| Timing for 3.3V supply |
| Access Time
[ns] |
| Process | 1k bit | 2k bit | 4k bit | 8k bit | 16k bit | 64k bit |
| BY_ | 10.7 | 11.4 | 12.3 | 13.9 | 16.5 | 37.1 |
| CX_ | 9.3 | 10.2 | 11.4 | 14.0 | 17.8 | 24.3 |
| Timing conditions: |
- typical process parameters
- VDD = 3.3V
- Tj = 27°C
|
|
| Notes |
In the high voltage process version CXZ the memory
Blocks can be used only in the fixed low voltage part (GND = 0V, VDD < 5.0V) of the
design.
|
| Description |
The ROM compiler system enables automatic generation of ROM memory
blocks for the configurations shown above. All representations for a
complete design flow as symbol, simulation models, GDSII layout data
are available. The compiler system ist not included in the HIT-Kit.
Memories are provided on request.
|
| Documentation |
|
Simulation Model Generation |
Registered Customers can generate their required simulation model(s)
directly via Internet by clicking on the model generation link below.
|